Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 2978-2980

  Sun, C J ^a   Zubair Anwar, M ^a   Chen, Q ^a   Yang, J W ^a   Asif Khan, M ^a   Shur, M S ^b   Bykhovski, A D ^c,g   Liliental Weber, Z ^d   Kisielowski, C ^e   Smith, M ^f   Lin, J Y ^f   Xiang, H X ^f  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c University of Virginia   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f KANSAS STATE UNIVERSITY   (United States)

^g IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

BAND DISCONTINUITIES; BAND EDGE STIMULATED EMISSION; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; QUANTUM SHIFT;

LIGHT EMITTING DIODES;

EID: 0031548686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118762     Document Type: Article

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