SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(5) Tomiya, Shigetaka a Kanitani, Yuya a Tanaka, Shinji a Ohkubo, Tadakatsu b Hono, Kazuhiro b

a SONY CORPORATION (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; ATOMIC SCALE; HIGH-ANGLE ANNULAR DARK FIELDS; LATERAL TRANSPORT; MULTIPLE QUANTUM WELLS; QUANTUM WELL STRUCTURES; THREADING DISLOCATION; VERTICAL TRANSPORTS;

NANOELECTRONICS; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79957474321 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3585118 Document Type: Article

Times cited : (59)

References (26)

1
- 0003453296
- (Springer, Berlin).
- S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
- (1997) The Blue Laser Diode
- Nakamura, S.¹ Fasol, G.²

2
- 0034230128
- 0021-4922, 10.1143/JJAP.39.L647
- S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, and T. Mukai, Jpn. J. Appl. Phys., Part 2 0021-4922 39, L647 (2000). 10.1143/JJAP.39.L647
- (2000) Jpn. J. Appl. Phys., Part 2 , vol.39 , pp. 647
- Nagahama, S.¹ Iwasa, N.² Senoh, M.³ Matsushita, T.⁴ Sugimoto, Y.⁵ Kiyoku, H.⁶ Kozaki, T.⁷ Sano, M.⁸ Matsumura, H.⁹ Umemoto, H.¹⁰ Chocho, K.¹¹ Mukai, T.¹²

3
- 6444244781
- 0021-4922, 10.1143/JJAP.41.1829
- T. Tojyo, S. Uchida, T. Mizuno, T. Asano, M. Takeya, T. Hino, S. Kijima, S. Goto, Y. Yabuki, and M. Ikeda, Jpn. J. Appl. Phys., Part 1 0021-4922 41, 1829 (2002). 10.1143/JJAP.41.1829
- (2002) Jpn. J. Appl. Phys., Part 1 , vol.41 , pp. 1829
- Tojyo, T.¹ Uchida, S.² Mizuno, T.³ Asano, T.⁴ Takeya, M.⁵ Hino, T.⁶ Kijima, S.⁷ Goto, S.⁸ Yabuki, Y.⁹ Ikeda, M.¹⁰

4
- 36449002328
- 0003-6951, 10.1063/1.112724
- F. A. Ponce, J. S. Major, W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 0003-6951 65, 2302 (1994). 10.1063/1.112724
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2302
- Ponce, F.A.¹ Major, J.S.² Plano, W.E.³ Welch, D.F.⁴

5
- 0035480371
- Modeling of threading dislocation reduction in growing GaN layers
- DOI 10.1016/S0022-0248(01)01468-3, PII S0022024801014683
- S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, J. Cryst. Growth 0022-0248 231, 371 (2001). 10.1016/S0022-0248(01)01468- 3 (Pubitemid 32698423)
- (2001) Journal of Crystal Growth , vol.231 , Issue.3 , pp. 371-390
- Mathis, S.K.¹ Romanov, A.E.² Chen, L.F.³ Beltz, G.E.⁴ Pompe, W.⁵ Speck, J.S.⁶

6
- 0000392520
- 0021-8979, 10.1063/1.363264
- X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. Den-Baars, and J. S. Speck, J. Appl. Phys. 0021-8979 80, 3228 (1996). 10.1063/1.363264
- (1996) J. Appl. Phys. , vol.80 , pp. 3228
- Wu, X.H.¹ Brown, L.M.² Kapolnek, D.³ Keller, S.⁴ Keller, B.⁵ Den-Baars, S.P.⁶ Speck, J.S.⁷

7
- 0029637531
- 0003-6951, 10.1063/1.113252
- S. D. Lester, F. A. Ponce, M. G. Craford, and D. A. Steigerwald, Appl. Phys. Lett. 0003-6951 66, 1249 (1995). 10.1063/1.113252
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1249
- Lester, S.D.¹ Ponce, F.A.² Craford, M.G.³ Steigerwald, D.A.⁴

8
- 0001229423
- 0021-4922, 10.1143/JJAP.36.L382
- T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 0021-4922 36, L382 (1997). 10.1143/JJAP.36.L382
- (1997) Jpn. J. Appl. Phys., Part 2 , vol.36 , pp. 382
- Takeuchi, T.¹ Sota, S.² Katsuragawa, M.³ Komori, M.⁴ Takeuchi, H.⁵ Amano, H.⁶ Akasaki, I.⁷

9
- 0141858877
- High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
- DOI 10.1063/1.1351517
- P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. All̀gre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 0003-6951 78, 1252 (2001). 10.1063/1.1351517 (Pubitemid 33662255)
- (2001) Applied Physics Letters , vol.78 , Issue.9 , pp. 1252-1254
- Lefebvre, P.¹ Morel, A.² Gallart, M.³ Taliercio, T.⁴ Allegre, J.⁵ Gil, B.⁶ Mathieu, H.⁷ Damilano, B.⁸ Grandjean, N.⁹ Massies, J.¹⁰

10
- 0035855004
- Structural analysis of InGaN epilayers
- DOI 10.1088/0953-8984/13/32/307, PII S095389840124778X, Invited papers on semiconducting nitrides
- K. P. O'Donnell, J. F. W. Mosselmans, R. W. Martin, S. Pereira, and M. E. White, J. Phys.: Condens. Matter 0953-8984 13, 6977 (2001). 10.1088/0953-8984/13/32/307 (Pubitemid 32782541)
- (2001) Journal of Physics Condensed Matter , vol.13 , Issue.32 , pp. 6977-6991
- O'Donnell, K.P.¹ Mosselmans, J.F.W.² Martin, R.W.³ Pereira, S.⁴ White, M.E.⁵

11
- 33750015835
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
- DOI 10.1038/nmat1726, PII NMAT1726
- S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota, Nature Mater. 1476-1122 5, 810 (2006). 10.1038/nmat1726 (Pubitemid 44570864)
- (2006) Nature Materials , vol.5 , Issue.10 , pp. 810-816
- Chichibu, S.F.¹ Uedono, A.² Onuma, T.³ Haskell, B.A.⁴ Chakraborty, A.⁵ Koyama, T.⁶ Fini, P.T.⁷ Keller, S.⁸ Denbaars, S.P.⁹ Speck, J.S.¹⁰ Mishra, U.K.¹¹ Nakamura, S.¹² Yamaguchi, S.¹³ Kamiyama, S.¹⁴ Amano, H.¹⁵ Akasaki, I.¹⁶ Han, J.¹⁷ Sota, T.¹⁸

12
- 27144482123
- Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
- DOI 10.1103/PhysRevLett.95.127402, 127402
- A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze, Phys. Rev. Lett. 0031-9007 95, 127402 (2005). 10.1103/PhysRevLett.95. 127402 (Pubitemid 41505655)
- (2005) Physical Review Letters , vol.95 , Issue.12 , pp. 1-4
- Hangleiter, A.¹ Hitzel, F.² Netzel, C.³ Fuhrmann, D.⁴ Rossow, U.⁵ Ade, G.⁶ Hinze, P.⁷

13
- 0000613857
- Pit formation in GaInN quantum wells
- DOI 10.1063/1.120853, PII S0003695198011061
- Y. Chen, T. Takeuchi, H. Amino, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 0003-6951 72, 710 (1998). 10.1063/1.120853 (Pubitemid 128672389)
- (1998) Applied Physics Letters , vol.72 , Issue.6 , pp. 710-712
- Chen, Y.¹ Takeuchi, T.² Amano, H.³ Akasaki, I.⁴ Yamada, N.⁵ Kaneko, Y.⁶ Wang, S.Y.⁷

14
- 21544482023
- Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
- DOI 10.1063/1.120844, PII S0003695198029064
- X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 0003-6951 72, 692 (1998). 10.1063/1.120844 (Pubitemid 128672383)
- (1998) Applied Physics Letters , vol.72 , Issue.6 , pp. 692-694
- Wu, X.H.¹ Elsass, C.R.² Abare, A.³ MacK, M.⁴ Keller, S.⁵ Petroff, P.M.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸ Rosner, S.J.⁹

15
- 0037415827
- 0003-6951, 10.1063/1.1542683
- K. Watanabe, J. R. Yang, S. Y. Huang, K. Inoke, J. H. Hsu, R. C. Tu, T. Yamazaki, N. Nakanishi, and M. Shiojiri, Appl. Phys. Lett. 0003-6951 82, 718 (2003). 10.1063/1.1542683
- (2003) Appl. Phys. Lett. , vol.82 , pp. 718
- Watanabe, K.¹ Yang, J.R.² Huang, S.Y.³ Inoke, K.⁴ Hsu, J.H.⁵ Tu, R.C.⁶ Yamazaki, T.⁷ Nakanishi, N.⁸ Shiojiri, M.⁹

16
- 0001137412
- 0003-6951, 10.1063/1.1289904
- N. Sharma, P. Thomas, D. Tricker, and C. Humphreys, Appl. Phys. Lett. 0003-6951 77, 1274 (2000). 10.1063/1.1289904
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1274
- Sharma, N.¹ Thomas, P.² Tricker, D.³ Humphreys, C.⁴

17
- 77950841065
- 0021-4922, 10.1143/JJAP.49.028001
- K. Ding and Y. Zeng, Jpn. J. Appl. Phys. 0021-4922 49, 028001 (2010). 10.1143/JJAP.49.028001
- (2010) Jpn. J. Appl. Phys. , vol.49 , pp. 028001
- Ding, K.¹ Zeng, Y.²

18
- 33645499321
- 0003-6951, 10.1063/1.2005368
- K. Thompson, J. H. Booske, D. J. Larson, and T. F. Kelly, Appl. Phys. Lett. 0003-6951 87, 052108 (2005). 10.1063/1.2005368
- (2005) Appl. Phys. Lett. , vol.87 , pp. 052108
- Thompson, K.¹ Booske, J.H.² Larson, D.J.³ Kelly, T.F.⁴

19
- 33750822961
- First stages of the formation of Ni silicide by atom probe tomography
- DOI 10.1063/1.2370501
- K. Hoummada, E. Cadel, D. Mangelinck, C. Perrin-Pellegrino, D. Blavette, and B. Deconihout, Appl. Phys. Lett. 0003-6951 89, 181905 (2006). 10.1063/1.2370501 (Pubitemid 44711500)
- (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 181905
- Hoummada, K.¹ Cadel, E.² Mangelinck, D.³ Perrin-Pellegrino, C.⁴ Blavette, D.⁵ Deconihout, B.⁶

20
- 33646249544
- 0034-6748, 10.1063/1.1829975
- G. Da Costa, F. Vurpillot, A. Bostel, M. Bouet, and B. Deconihout, Rev. Sci. Instrum. 0034-6748 76, 013304 (2005). 10.1063/1.1829975
- (2005) Rev. Sci. Instrum. , vol.76 , pp. 013304
- Da Costa, G.¹ Vurpillot, F.² Bostel, A.³ Bouet, M.⁴ Deconihout, B.⁵

21
- 67651024108
- 1359-6462, 10.1016/j.scriptamat.2009.05.043
- Y. M. Chen, T. Ohkubo, M. Kodzuka, M. Morita, and K. Hono, Scr. Mater. 1359-6462 61, 693 (2009). 10.1016/j.scriptamat.2009.05.043
- (2009) Scr. Mater. , vol.61 , pp. 693
- Chen, Y.M.¹ Ohkubo, T.² Kodzuka, M.³ Morita, M.⁴ Hono, K.⁵

22
- 0043014839
- 0003-6951, 10.1063/1.1592314
- E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini, and A. Franciosi, Appl. Phys. Lett. 0003-6951 83, 662 (2003). 10.1063/1.1592314
- (2003) Appl. Phys. Lett. , vol.83 , pp. 662
- Carlino, E.¹ Modesti, S.² Furlanetto, D.³ Piccin, M.⁴ Rubini, S.⁵ Franciosi, A.⁶

23
- 79957450255
- in, edited by D. Bloor, R. W. Cahn, R. J. Brook, M. C. Flemings, and S. Mahajan (Pergamon, Oxford), Vol.
- E. Kapon, in The Encyclopedia of Advanced Materials, edited by, D. Bloor, R. W. Cahn, R. J. Brook, M. C. Flemings, and, S. Mahajan, (Pergamon, Oxford, 1994), Vol. 3, p. 2121.
- (1994) The Encyclopedia of Advanced Materials , vol.3 , pp. 2121
- Kapon, E.¹

24
- 33645920309
- 0021-8979, 10.1063/1.2180532
- M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, J. Appl. Phys. 0021-8979 99, 073505 (2006). 10.1063/1.2180532
- (2006) J. Appl. Phys. , vol.99 , pp. 073505
- Shiojiri, M.¹ Chuo, C.C.² Hsu, J.T.³ Yang, J.R.⁴ Saijo, H.⁵

25
- 0034226147
- 0031-8965, 10.1002/1521-396X(200007)180:1<315::AID-PSSA3153.0.CO;2-2
- F. Scholz, J. Off, E. Fehrenbacher, O. Gfrörer, and G. Brock, Phys. Status Solidi A 0031-8965 180, 315 (2000). 10.1002/1521-396X(200007)180: 1<315::AID-PSSA3153.0.CO;2-2
- (2000) Phys. Status Solidi A , vol.180 , pp. 315
- Scholz, F.¹ Off, J.² Fehrenbacher, E.³ Gfrörer, O.⁴ Brock, G.⁵

26
- 0041510469
- 0021-8979, 10.1063/1.1586972
- S. M. Ting, J. C. Ramer, D. I. Florescu, V. N. Merai, B. E. Albert, A. Parekh, D. S. Lee, D. Lu, D. V. Christini, L. Liu, and E. A. Amour, J. Appl. Phys. 0021-8979 94, 1461 (2003). 10.1063/1.1586972
- (2003) J. Appl. Phys. , vol.94 , pp. 1461
- Ting, S.M.¹ Ramer, J.C.² Florescu, D.I.³ Merai, V.N.⁴ Albert, B.E.⁵ Parekh, A.⁶ Lee, D.S.⁷ Lu, D.⁸ Christini, D.V.⁹ Liu, L.¹⁰ Amour, E.A.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.