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Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(5) Tomiya, Shigetaka a Kanitani, Yuya a Tanaka, Shinji a Ohkubo, Tadakatsu b Hono, Kazuhiro b

a SONY CORPORATION (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; ATOMIC SCALE; HIGH-ANGLE ANNULAR DARK FIELDS; LATERAL TRANSPORT; MULTIPLE QUANTUM WELLS; QUANTUM WELL STRUCTURES; THREADING DISLOCATION; VERTICAL TRANSPORTS;

NANOELECTRONICS; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79957474321 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3585118 Document Type: Article

Times cited : (61)

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