Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Marona, L ^a   Wisniewski, P ^a   Prystawko, P ^a   Grzegory, I ^a   Suski, T ^a   Porowski, S ^a   Perlin, P ^a   Czernecki, R ^b   Leszczynski M ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIFFUSION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HIGH PRESSURE EFFECTS; INDIUM COMPOUNDS;

DIFFERENTIAL EFFICIENCY; GAN CRYSTALS; INGAN LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 33646861381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2204845     Document Type: Article

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