High-power AlGalnP laser diodes with current-injection-free region near the laser facet

Optical Engineering

Volumn 45, Issue 3, 2006, Pages

  Xu, Yun ^a   Li, Yuzhang ^a   Gan, Qiaoqiang ^a   Cao, Qing ^a   Song, Guofeng ^a   Guo, Liang ^a   Chen, Lianghui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGalnP; Current injection free region; Laser diodes; Ridge waveguide

Indexed keywords

HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT-INJECTION-FREE REGION; LASER FACET; RIDGE WAVEGUIDE; THRESHOLD CURRENT; TRANSVERSE-MODE OPERATION;

SEMICONDUCTOR LASERS;

EID: 33748598428     PISSN: 00913286     EISSN: 15602303     Source Type: Journal    
DOI: 10.1117/1.2185567     Document Type: Article

References (5)

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5. M. Ohya, K. Doi, H. Fujii, et al., "Highly reliable operation at 80 °C for 650 nm 5 mW AlGaInP LDs," Electron. Lett. 33, 1100-1111 (1997).