Self-compensation in Mg doped p-type GaN grown by MOCVD

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 270-273

  Obloh, H ^a   Bachem, K H ^a   Kaufmann, U ^a   Kunzer, M ^a   Maier, M ^a   Ramakrishnan, A ^a   Schlotter, P ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

GaN : Mg; MOCVD; Self compensation

Indexed keywords

CARRIER CONCENTRATION; EMISSION SPECTROSCOPY; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

DOMINANT RADIATIVE RECOMBINATION MECHANISMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477175     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00578-8     Document Type: Article

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