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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1779-1782

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

(5) Tomiya, S a Goto, O a Hoshina, Y a Tanaka, T a Ikeda, M a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-AXIS; PLANAR DEFECTS; QUANTUM WELL LAYERS; STRUCTURAL DEFECTS; 61.72.LK; 68.37.LP; 68.65.FG; 81.05.EA; INVERSION DOMAINS; MULTIPLE QUANTUM-WELL STRUCTURES; TRANSMISSION ELECTRON;

CRYSTAL DEFECTS; GALLIUM NITRIDE; NUCLEATION; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; INVERSION LAYERS; SEMICONDUCTOR QUANTUM WELLS; SURFACE DEFECTS;

SEMICONDUCTOR QUANTUM WELLS; EDGE DISLOCATIONS;

EID: 33746324533 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565347 Document Type: Conference Paper

Times cited : (7)

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