Electroabsorption Spectroscopy - Direct Determination of the Strong Piezoelectric Field in InGaN/GaN Heterostructure Diodes

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 131-134

  Kiesel, P ^a   Renner, F ^a   Kneissl, M ^b   Johnson, N M ^b   Dohler G H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009308438     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<131::AID-PSSA131>3.0.CO;2-C     Document Type: Article

References (4)

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2. F. BERNARDINI, V. FIORENTINI, and D. VANDERBILT, Phys. Rev. B 56, R10024 (1997).
3. T. TAKEUCHI, CHR. WETZEL et al., Appl. Phys. Lett. 73, 1691 (1998).
4. M. D. MCCLUSKEY, C. G. VAN DE WALLE, C. P. MASTER, L. T. ROMANO, and N. M. JOHNSON, Appl. Phys. Lett 72, 2725 (1998).