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Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 839-844

Structural defects in Mg-doped GaN and AlGaN grown by MOCVD

(4) Tomiya, S a Goto, S b Takeya, M b Ikeda, M b

a Material Analysis Dept Technical Solution Center (United States)

b SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; EPITAXIAL LAYERS; TRIMETHYLALUMINIUM; TRIMETHYLGALLIUM;

EPITAXIAL GROWTH;

EID: 0037695880 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-743-l12.7 Document Type: Article

Times cited : (5)

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