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Journal of Physics D: Applied Physics

Volumn 41, Issue 15, 2008, Pages

Deep level characteristics in n-GaN with inductively coupled plasma damage

(5) Cho, H K a,c Khan, F A a Adesida, I a Fang, Z Q b Look, D C b

a United States of America (United States)

b WRIGHT STATE UNIVERSITY (United States)

c LG Electronics Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; IONS; PHOTORESISTS; PLASMAS; SEMICONDUCTING GALLIUM;

BIAS-VOLTAGE; CONTROL SAMPLES; COUPLED PLASMAS; DEEP LEVELS; DEEP TRAPS; ENERGETIC IONS; ICP-RIE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; ION-INDUCED DAMAGE; TRAP LEVELS;

REACTIVE ION ETCHING;

EID: 49749153459 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/41/15/155314 Document Type: Article

Times cited : (62)

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