Mg-rich precipitates in the p-type doping of InGaN-based laser diodes

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2469-2471

  Hansen, M ^a   Chen, L F ^a   Lim, S H ^a   Denbaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNAL QUANTUM EFFICIENCY; LASER STRUCTURES; P-TYPE; P-TYPE DOPING; RADIATIVE RECOMBINATION;

HOLE CONCENTRATION; MAGNESIUM; TRANSMISSION ELECTRON MICROSCOPY;

PRECIPITATES;

EID: 79956049200     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467704     Document Type: Article

References (20)

1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989). jjc JAPLD8 0021-4922
2. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 2 30, L1708 (1991). jjc JAPLD8 0021-4922
3. P. Kozodoy, Ph.D. Dissertation in Electrical and Computer Engineering at University of California at Santa Barbara, 1999.
4. J. Neugebauer and C. G. Van de Walle, Mater. Res. Soc. Symp. Proc. 395, 645 (1996). mrs MRSPDH 0272-9172
5. C. G. Van de Walle and J. Neugebauer, Mater. Res. Soc. Symp. Proc. 449, 861 (1997). mrs MRSPDH 0272-9172
6. D. P. Bour, H. F. Chung, W. Gotz, L. Romano, B. S. Krusor, D. Hofsetter, S. Rudaz, C. P. Kuo, F. A. Ponce, N. M. Johnson, M. G. Craford, and R. D. Bringans, Mater. Res. Soc. Symp. Proc. 449, 509 (1997). mrs MRSPDH 0272-9172
7. Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, D. J. H. Lambert, C. J. Eiting, and R. D. Dupuis, Appl. Phys. Lett. 75, 4159 (1999). apl APPLAB 0003-6951
8. P. Vennegues, M. Benaissa, B. Beaumont, E. Feltin, P. De Mierry, S. Dalmasso, M. Leroux, and P. Gibart, Appl. Phys. Lett. 77, 880 (2000). apl APPLAB 0003-6951
9. M. Benaissa, P. Vennegues, B. Beaumont, P. Gibart, W. Saikaly, and A. Charai, Appl. Phys. Lett. 77, 2115 (2000). apl APPLAB 0003-6951
10. V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999). apl APPLAB 0003-6951
11. L. T. Romano, J. E. Northrup, A. J. Ptak, and T. H. Myers, Appl. Phys. Lett. 77, 2479 (2000). apl APPLAB 0003-6951
12. S. Nakamura, J. Mater. Res. 14, 2716 (1999). jmr JMREEE 0884-2914
13. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, J. Cryst. Growth 189/190, 820 (1998). jcr JCRGAE 0022-0248
14. A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi, Mater. Res. Soc. Symp. Proc. 482, 1185 (1998). mrs MRSPDH 0272-9172
15. L. Sugiura, J. Nishio, M. Onomura, S. Nunoue, K. Itaya, and M. Ishikawa, Mater. Res. Soc. Symp. Proc. 482, 1157 (1998). mrs MRSPDH 0272-9172
16. D. P. Bour, M. Kneissl, D. Hofstetter, L. T. Romano, M. McCluskey, C. G. Van de Walle, B. S. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, and N. M. Johnson, Mater. Sci. Eng., B 59, 33 (1999). msb MSBTEK 0921-5107
17. T. Miyajima, T. Kobayashi, T. Hino, M. Ikeda, S. Tomiya, A. Satake, Y. Masumoto, K. Akimoto, T. Araki, and Y. Nanishi, 4th International Conference on Nitride Semiconductors, Denver, Colorado, 2001.
18. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996). apl APPLAB 0003-6951
19. M. Hansen, P. Fini, L. Zhao, A. C. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 76, 529 (2000). apl APPLAB 0003-6951
20. A. C. McLaren, Transmission Electron Microscopy of Minerals and Rocks (Cambridge University Press, Cambridge, 1991).