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Volumn 29, Issue 6, 2008, Pages 578-581

Extensive analysis of the degradation of blu-ray laser diodes

Author keywords

Degradation; Gallium nitride; Laser diode (LD); Reliability

Indexed keywords

PHOTODEGRADATION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

EID: 44849104188     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.921098     Document Type: Article
Times cited : (40)

References (9)
  • 4
    • 0041929823 scopus 로고    scopus 로고
    • Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing
    • Oct
    • L. L. Goddard, M. Kneissl, D. P. Bour, and N. M. Johnson, "Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing," J. Appl. Phys., vol. 88, no. 7, pp. 3820-3823, Oct. 2000.
    • (2000) J. Appl. Phys , vol.88 , Issue.7 , pp. 3820-3823
    • Goddard, L.L.1    Kneissl, M.2    Bour, D.P.3    Johnson, N.M.4
  • 5
    • 33646861381 scopus 로고    scopus 로고
    • L.Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczynski, Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals, Appl. Phys. Lett., 88, no. 20, pp. 201 111-1-201 111-3, May 2006.
    • L.Marona, P. Wisniewski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, P. Perlin, R. Czernecki, and M. Leszczynski, "Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals," Appl. Phys. Lett., vol. 88, no. 20, pp. 201 111-1-201 111-3, May 2006.
  • 6
    • 13844254127 scopus 로고    scopus 로고
    • Dislocation related issues in the degradation of GaN-based laser diodes
    • Nov./Dec
    • S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, "Dislocation related issues in the degradation of GaN-based laser diodes," IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 6, pp. 1277-1286, Nov./Dec. 2004.
    • (2004) IEEE J. Sel. Topics Quantum Electron , vol.10 , Issue.6 , pp. 1277-1286
    • Tomiya, S.1    Hino, T.2    Goto, S.3    Takeya, M.4    Ikeda, M.5
  • 9
    • 7044233214 scopus 로고    scopus 로고
    • Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
    • Sep
    • Y. Xi and E. F. Schubert, "Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method," Appl. Phys. Lett., vol. 85, no. 12, pp. 2163-2165, Sep. 2004.
    • (2004) Appl. Phys. Lett , vol.85 , Issue.12 , pp. 2163-2165
    • Xi, Y.1    Schubert, E.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.