Facet degradation of GaN heterostructure laser diodes

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Schoedl, Thomas ^a   Schwarz, Ulrich T ^a   Kümmler, Volker ^b   Furitsch, Michael ^b   Leber, Andreas ^b   Miler, Andreas ^b   Lell, Alfred ^b   Härle, Volker ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASER DIODES; BULK DEGRADATION; FACET DEGRADATION; FOCUSED ION BEAMS (FIB);

DEGRADATION; GALLIUM NITRIDE; HETEROJUNCTIONS; ION BEAMS; METALLIZING; NITROGEN; OXIDATION; OXYGEN; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; VAPORS;

SEMICONDUCTOR LASERS;

EID: 21644432649     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929851     Document Type: Article

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