Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Applied Physics Letters

Volumn 73, Issue 12, 1998, Pages 1634-1636

  Kim, Ig Hyeon ^a   Park, Hyeong Soo ^a   Park, Yong Jo ^a   Kim, Taeil ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE; STRAIN ENERGY; SURFACE MOBILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032555804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122229     Document Type: Article

References (8)

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