Vacancy defects as compensating centers in Mg-doped GaN

Physical Review Letters

Volumn 90, Issue 13, 2003, Pages

  Hautakangas, S ^a   Oila, J ^a   Alatalo, M ^a,b   Saarinen, K ^a   Liszkay, L ^c,e   Seghier, D ^d   Gislason, H P ^d  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF OULU   (Finland)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^d UNIVERSITY OF ICELAND   (Iceland)

^e WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; FERMI LEVEL; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTONS; POSITRON ANNIHILATION SPECTROSCOPY; SCATTERING PARAMETERS;

MAGNESIUM-DOPED GALLIUM NITRIDE; MONOENERGETIC POSITRON BEAM; VACANCY DEFECTS;

GALLIUM NITRIDE;

EID: 0346135258     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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