Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

Solid State Communications

Volumn 109, Issue 7, 1999, Pages 439-443

  Cheng, T S ^a   Novikov, S V ^a,b   Foxon, C T ^a   Orton, J W ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

A.Semiconductors; B.Epitaxy; C.Impurities in semiconductors

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; FILM GROWTH; MAGNESIUM; MOLECULAR BEAM EPITAXY; MONOLAYERS; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

FINITE CONCENTRATION GRADIENT; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033075534     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00601-2     Document Type: Article

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