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Volumn 77, Issue 9, 2000, Pages 1274-1276

Chemical mapping and formation of V-defects in InGaN multiple quantum wells

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[No Author keywords available]

Indexed keywords


EID: 0001137412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289904     Document Type: Article
Times cited : (151)

References (11)
  • 1
    • 0042561618 scopus 로고    scopus 로고
    • edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel INSPEC. Stevenage, U.K., Chap. C3.1
    • S. Nakamura, in Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC. Stevenage, U.K., 1999). Vol. 23, Chap. C3.1, p. 533.
    • (1999) Gallium Nitride and Related Semiconductors , vol.23 , pp. 533
    • Nakamura, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.