Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition

Applied Physics Letters

Volumn 75, Issue 26, 1999, Pages 4159-4161

  Liliental Weber, Z ^a   Benamara, M ^a   Swider, W ^a   Washburn, J ^a   Grzegory, I ^b   Porowski, S ^b   Lambert, D J H ^c   Eiting, C J ^c   Dupuis, R D ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012215250     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125568     Document Type: Article

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