Si and Ge nanocrystals for future memory devices

Materials Science in Semiconductor Processing

Volumn 15, Issue 6, 2012, Pages 615-626

  Bonafos, C ^a   Carrada, M ^a   Benassayag, G ^a   Schamm Chardon, S ^a   Groenen, J ^a   Paillard, V ^a   Pecassou, B ^a   Claverie, A ^a   Dimitrakis, P ^b   Kapetanakis, E ^b   Ioannou Sougleridis, V ^b   Normand, P ^b   Sahu, B ^c   Slaoui, A ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

^c Faculté de Médecine   (France)

Author keywords

Ion implantation; Nanocrystals; Non volatile memory

Indexed keywords

CROSSTALK EFFECT; DESIGN FLEXIBILITY; DIELECTRIC STACK; ELECTRICAL STUDIES; FLOATING NODES; FLOATING-GATES; GATE INSULATOR; GATE OXIDE; GE NANOCRYSTALS; HOST MATRICES; IN-VACUUM; INSULATOR LAYER; ION BEAM SYNTHESIS; LOW-VOLTAGE; MATERIAL SCIENCE; MEMORY CELL; NANOCRYSTAL MEMORIES; NON-VOLATILE MEMORIES; NONVOLATILITY; OXIDATION PROCESS; RESEARCH EFFORTS; STRUCTURAL CHARACTERIZATION; SYSTEMATIC INVESTIGATIONS; TECHNOLOGICAL ROUTE; TUNNEL OXIDES;

DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GERMANIUM; HAFNIUM OXIDES; ION BEAMS; ION IMPLANTATION; MOS DEVICES; NANOCRYSTALS; SILICON NITRIDE;

SILICON;

EID: 84870066183     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.09.004     Document Type: Review

References (58)

1. ITRS International Technology Roadmap for Semiconductors, Executive Summary, 2009.
2. P. Dimitrakis, P. Normand, and D. Tsoukalas Silicon nanocrystal memories Leonid Khriachtchev, Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives 2008 Pan Publishing Singapore pp. 211-244
3. Y-Ch Lien, J.M. Shieh, W.H. Huang, Tu Ch-H, Ch Wang, Ch-H Shen, B.T. Dai, C.L. Pan, Ch Hu, and F.L. Yang Applied Physics Letters 100 2012 143501 143504
4. J. Yater, Highly optimized nanocrystal-based split gate flash for high performance and low power microcontroller applications. in: Proceedings of the 3rd International Memory Workshop (IMW), 2011.
5. C. Gerardi, V. Ancarani, R. Portoghese, S. Giuffrida, M. Bileci, G. Bimbo, O. Brafa, D. Mello, G. Ammendola, E. Tripiciano, R. Puglisi, and S.A. Lombardo IEEE Transactions on Electron Devices 54 2007 1376 1383
6. R.F. Steimle, R. Muralidhar, R. Rao, M. Sadd, C.T. Swift, J. Yater, B. Hradsky, S. Straub, H. Gasquet, L. Vishnubhotla, E.J. Prinz, T. Merchant, B. Acred, K. Chang, and B.E. White Jr. Microelectronics Reliability 47 2007 585 592
7. R. Gusmeroli, Ch Monzio Compagnoni, and A.-S. Spinelli Microelectronic Engineering 84 2007 2869 2874
8. P. Dimitrakis, and P. Normand Solid-State Electronics 51 2007 147
9. P. Dimitrakis, S. Schamm-Chardon, C. Bonafos, P. Normand, Nanoparticle-Based Memories: Concept and Operation Principles. Applications of Nanomaterials in: S. Ramesh Chaughule, C. Shrikant Watawe (Eds.), 2012, pp. 1-26, (Chapter 2).
10. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan Applied Physics Letters 68 1996 1377 1379
11. J. De Blauwe, M. Ostraat, M. Green, G. Weber, T. Sorsch, A. Kerber, F. Klemens, R. Cirelli, E. Ferry, J. Grazul, F. Baumann, Y. Kim, W. Mansfield, J. Bude, J. Lee, S. Hillenius, R. Flagan, and H. Atwater IEDM Technical Digest 2000 683 686
12. P. Normand, D. Tsoukalas, E. Kapetanakis, J. Van den Berg, D.G. Armour, J. Stoemenos, and C. Vieu Electrochemical and Solid State Letters 1 1998 88
13. S. Jacob, G. Festes, S. Bodnar, R. Coppard, J. Thiery, T. Pate-Cazal, T. Pedron, B. De Salvo, L. Perniola, E. Jalaguier, F. Boulanger, and S. Deleonibus Proceedings of the IEEE ESSDERC 2007 410 413
14. M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, and E. Gautier Solid State Electronics 50 2006 1310 1314
15. P.D. Szkutnik, A. Karmous, F. Bassani, A. Ronda, I. Berbezier, K. Gacem, A. El Hdiy, and M. Troyon European Physical Journal - Applied Physics 41 2008 103 106
16. S. Duguay, J.J. Grob, A. Slaoui, Y. Le Gall, and M. Amann-Liess Journal of Applied Physics 97 2007 104330
17. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E.C. Kan IEEE Transactions on Electron Devices 49 2002 1606 1613
18. W. Chen, T. Chang, P. Liu, P. Lin, C. Tu, and C. Chang Applied Physics Letters 90 2007 112 108-1 112 108-3
19. J. Dufourcq, S. Bodnar, G. Gay, D. Lafond, P. Mur, G. Molas, J.P. Nieto, L. Vandroux, L. Jodin, F. Gustavo, and T. Baron Applied Physics Letters 92 2008 073 102-1 073 102-3
20. J.H. Chen, Y.Q. Wang, W.J. Yoo, Y. Yeo, G. Samudra, D.S. Chan, A.Y. Du, and D. Kwong IEEE Transactions on Electron Devices 51 2004 1840 1848
21. D. Kim, T. Kim, and S. Sanerjee IEEE Transactions on Electron Devices 50 2003 1823 1829
22. J. Lu, Y. Kuo, J. Yan, and C. Lin Japanese Journal of Applied Physics 34 2006 L901
23. V. Beyer, and J. Von Borany Ion-beam synthesis of nanocrystals for multidot memory structures E. Zschech, C. Whelan, Mikolajick Th, Materials for Information Technology 2005 Springer London pp. 139-147
24. P. Normand, P. Dimitrakis, E. Kapetanakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, H. Coffin, G. Benassayag, A. Claverie, V. Soncini, A. Agarwal, Ch Sohl, and M. Ameen Microelectronic Engineering 73-74 2004 730 735
25. C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. Ben Assayag, A. Claverie, T. Müller, K.H. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis, and P. Normand Journal of Applied Physics 95 2004 5696
26. C. Bonafos, H. Coffin, S. Schamm, N. Cherkashin, G. Ben Assayag, P. Dimitrakis, P. Normand, M. Carrada, V. Paillard, and A. Claverie Solid State Electronics 49 2005 1734 1744
27. T. Müller, C. Bonafos, K.H. Heinig, M. Tencé, H. Coffin, N. Cherkashin, G. Ben Assayag, S. Schamm, G. Zanchi, C. Colliex, W. Möller, and A. Claverie Applied Physics Letters 82 2004 2373
28. H. Hosono Journal of Non-Crystalline Solids 187 1995 457 472
29. E. Kapetanakis, P. Normand, and P. Holliger Journal of Applied Physics 103 2008 064515
30. M. Perego, S. Ferrari, M. Fanciulli, G. Ben Assayag, C. Bonafos, M. Carrada, and A. Claverie Journal of Applied Physics 95 2004 257
31. S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex Ultramicroscopy 108 2008 346 357
32. G. Ben Assayag, C. Bonafos, M. Carrada, P. Normand, D. Tsoukalas, and A. Claverie Applied Physics Letters 82 2003 200
33. M. Carrada, A. Wellner, V. Paillard, C. Bonafos, H. Coffin, and A. Claverie Applied Physics Letters 87 2005 251911
34. M.L. Brongersma, A. Polman, K.S. Min, E. Boer, T. Tambo, and H.A. Atwater Applied Physics Letters 72 1998 2577
35. C. Ternon, F. Gourbilleau, R. Rizk, and C. Dufour Physica E 16 2003 517
36. M. Carrada, A. Zerga, M. Amann, J. Grob, J. Stoquert, and A. Slaoui Materials Science and Engineering B 147 2008 218 21
37. L. Rebohle, J. von Borany, H. Fröb, and W. Skorupa Applied Physics B 71 2000 131
38. A. Wellner, V. Paillard, C. Bonafos, H. Coffin, A. Claverie, B. Schmidt, and K.H. Heinig Applied Physics 94 2003 5639
39. J.R. Huntzinger, A. Mlayah, V. Paillard, A. Wellner, N. Combe, and C. Bonafos Physical Review B 2006 74 115308
40. A. Wellner, V. Paillard, H. Coffin, N. Cherkashin, and C. Bonafos Journal of Applied Physics 2004 96 2403
41. P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G. Ben Asssayag, A. Claverie, M. Perego, M. Fanciulli, and V. Soncini Solid-State Electronics 48 2004 1511
42. A. Claverie, and C. Bonafos Diffusion in Solids and Liquids 531 2006 258 260
43. P. Dimitrakis, P. Normand Semiconductor nanocrystal floating-gate memory, in: A. Claverie, D. Tsoukalas, T.J. King, J.M. Slaughter (Eds.), Materials and Processes for Nonvolatile Memories. Materials Research Society Symposium Proceedings, vol. 830. Warrendale, PA, D5.1; 2005, pp. 203-216.
44. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Tsoukalas, K. Beltsios, N. Cherkashin, C. Bonafos, H. Coffin, G. Benassayag, and A. Claverie Applied Physics Letters 83 2003 168
45. D. Tsoukalas, P. Dimitrakis, S. Kolliopoulou, and P. Normand Materials Science and Engineering B 124-125 2005 93 101
46. H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, A. Claverie, M. Respaud, P. Dimitrakis, and P. Normand Journal of Applied Physics 99 2006 044302
47. P.F. Fazzini, C. Bonafos, A. Claverie, A. Hubert, T. Ernst, and M. Respaud Journal of Applied Physics 110 2011 033524
48. S. Perret-Tran-Van, K. Makasheva, B. Despax, C. Bonafos, P.E. Coulon, and V. Paillard Nanotechnology 21-28 2010 285605
49. M.H. White, D.A. Adams, and J.K. Bu IEEE Circuits and Devices 16 2000 22 31
50. V. Ioannou-Sougleridis, V Em Vamvakas, P. Dimitrakis, P. Normand, and C. Bonafos Nanotechnology 2007 215204
51. N. Nikolaou, P. Dimitrakis, P. Normand, S. Schamm, C. Bonafos, G. Ben Assayag, A. Mouti, and V. Ioannou-Sougleridis Nanotechnology 20 2009 305704
52. P. Dimitrakis, A. Mouti, C. Bonafos, S. Schamm, G. Ben Assayag, V. Ioannou-Sougleridis, B. Schmidt, J. Becker, and P. Normand Microelectronic Engineering 86 2009 1838 1841
53. M. Fanciulli, M. Perego, C. Bonafos, A. Mouti, S. Schamm, and G. Benassayag Advances in Science and Technology 51 2006 156
54. P.E. Coulon, S. Schamm, G. Ben Assayag, B. Pecassou, M. Carrada, S. Bhabani, A. Slaoui, S. Lhostis, C. Bonafos, in: Y. Fujisaki, R. Waser, T. Li, C. Bonafos, (Eds.), Materials Research Society Symposium Proceedings, vol. 1160, 2009, pp. H01-03.
55. B. Schmidt, D. Grambole, and F. Herrmann Nuclear Instruments and Methods in Physics Research Section B 191 2002 482
56. B.S. Sahu, F. Gloux, A. Slaoui, M. Carrada, D. Muller, J. Groenen, C. Bonafos, and S. Lhostis Nanoscale Research Letters 6 2011 177
57. H. Choi, S. Choi, T.-W. Kim, T. Lee, and H. Hwan Japanese Journal of Applied Physics 45 2006 L807 L809
58. Y. Spiegel, C. Bonafos, G. Ben-Assayag, A. Slaoui, F. Torregrosa, J. Groenen, S. Bhabani, P. Normand, in: Proceedings of the Ion Implantation Technology (IIT), AIP Conference Proceeding Series, Springer, ISSN 0094-243X, in press.