Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Coffin, H ^a   Bonafos, C ^a   Schamm, S ^a   Cherkashin, N ^a,d   Assayag, G Ben ^a   Claverie, A ^a   Respaud, M ^b   Dimitrakis, P ^c   Normand, P ^c  

^a CEMES CNRS   (France)

^b INSA   (France)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; ION IMPLANTATION; OXIDATION; SILICA; SILICON;

SELF-LIMITING OXIDATION; SI NANOCRYSTALS; SURFACE DENSITY;

NANOSTRUCTURED MATERIALS;

EID: 33644607633     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171785     Document Type: Article

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