Effect of ion implantation energy for the synthesis of ge nanocrystals in sin films with hfo2/sio2 stack tunnel dielectrics for memory application

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Sahu, Bhabani Shankar ^a   Gloux, Florence ^b   Slaoui, Abdelilah ^a   Carrada, Marzia ^a   Muller, Dominique ^a   Groenen, Jesse ^b   Bonafos, Caroline ^b   Lhostis, Sandrine ^c  

^a Faculté de Médecine   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; DIGITAL STORAGE; HAFNIUM OXIDES; IONS; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; SILICON NITRIDE; CHEMICAL PROPERTIES; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

IMPLANTATION ENERGIES; ION IMPLANTATION ENERGY; ION IMPLANTATION METHODS; LOW OPERATING VOLTAGE; METAL-INSULATOR-SEMICONDUCTORS; NONVOLATILE MEMORY DEVICES; RETENTION CHARACTERISTICS; STACK TUNNEL DIELECTRICS; CHARGE STORAGE; GE NANOCRYSTALS; KEY VARIABLES; LOW ENERGIES; MEMORY APPLICATIONS; MEMORY STRUCTURE; MEMORY WINDOW; RETENTION PROPERTIES; SIN FILMS; SIN MATRIX; STACK STRUCTURE; THERMAL-ANNEALING;

ION IMPLANTATION; GERMANIUM;

EID: 84255172853     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-177     Document Type: Article

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