Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1838-1841

  Dimitrakis, P ^a   Mouti, A ^b   Bonafos, C ^b   Schamm, S ^b   Ben Assayag, G ^b   Ioannou Sougleridis, V ^a   Schmidt, B ^c   Becker, J ^d   Normand, P ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d Cambridge NanoTech Inc   (United States)

Author keywords

Ge nanocrystals; Ion implantation; Nanocrystal memory

Indexed keywords

BEFORE AND AFTER; CHARGE STORAGE; ELECTRICAL MEASUREMENT; GE NANOCRYSTALS; ION BEAM SYNTHESIS; LOW ENERGIES; MEAN DIAMETER; MEMORY APPLICATIONS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; NANOCRYSTAL MEMORY; SI SUBSTRATES; SPATIAL DISPERSION; STRUCTURAL AND ELECTRICAL PROPERTIES; THERMAL-ANNEALING;

ALUMINUM; ANNEALING; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GERMANIUM;

EID: 67349171511     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.074     Document Type: Article

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