Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 168-170

  Normand, P ^a   Kapetanakis, E ^a   Dimitrakis, P ^a   Tsoukalas, D ^a   Beltsios, K ^b   Cherkashin, N ^c   Bonafos, C ^c   Benassayag, G ^c   Coffin, H ^c   Claverie, A ^c   Soncini, V ^d   Agarwal, A ^e   Ameen, M ^e  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

^c CEMES CNRS   (France)

^d ST Central R and D Agrate   (Italy)

^e AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCRYSTALS;

ANNEALING; CRYSTALS; ELECTRIC POTENTIAL; ION BEAMS; MOS CAPACITORS; OXYGEN; SEMICONDUCTING SILICON; SILICA;

NANOSTRUCTURED MATERIALS;

EID: 0041339685     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588378     Document Type: Article

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