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Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

Structural and electrical properties of Ge nanocrystals embedded in SiO 2 by ion implantation and annealing

(5) Duguay, S a Grob, J J a Slaoui, A a Le Gall, Y a Amann Liess, M a

a Faculté de Médecine (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; GAUSSIAN-LIKE DISTRIBUTIONS; GERMANIUM NANOCRYTALS; MEMORY EFFECT;

ANNEALING; APPROXIMATION THEORY; CAPACITANCE MEASUREMENT; ELECTRIC PROPERTIES; ION IMPLANTATION; MONOLAYERS; MOS DEVICES; NANOSTRUCTURED MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING FILMS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

GERMANIUM;

EID: 20944446360 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1909286 Document Type: Article

Times cited : (61)

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