Parasitic memory effects in shallow-trench-isolated nanocrystal memory devices

Solid-State Electronics

Volumn 51, Issue 1, 2007, Pages 147-158

  Dimitrakis, P ^a   Normand, P ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Ion implantation; Nanocrystal; Nanocrystal memory; Parasitic transistor; STI; Trench isolation

Indexed keywords

ELECTRIC BATTERIES; ELECTRIC POTENTIAL; MOSFET DEVICES; SILICON COMPOUNDS; TRANSCONDUCTANCE; TRANSISTORS;

NANOCRYSTAL MEMORY; NANOCRYSTALS; PARASITIC TRANSISTORS; STI; TRENCH ISOLATION;

NANOSTRUCTURED MATERIALS;

EID: 33846844832     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.10.016     Document Type: Article

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