Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks

Nanotechnology

Volumn 20, Issue 30, 2009, Pages

  Nikolaou, N ^a   Dimitrakis, P ^a   Normand, P ^a   Schamm, S ^b   Bonafos, C ^b   Ben Assayag, G ^b   Mouti, A ^b   Ioannou Sougleridis, V ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT VOLTAGE; CURRENT MEASUREMENTS; CURRENT PEAK; DIELECTRIC STACK; ENERGY MINIMA; INJECTED CARRIERS; LOW ENERGY ION IMPLANTATION; NEGATIVE DIFFERENTIAL RESISTANCES; NITRIDE LAYERS; OXIDE NITRIDE OXIDES; SI NANOCRYSTAL; SILICON NANOCRYSTALS; TEMPERATURE DEPENDENT; THERMAL-ANNEALING;

DIELECTRIC MATERIALS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ION BOMBARDMENT; ION IMPLANTATION; NITRIDES; SILICON;

NANOCRYSTALS;

GLYCERYL TRINITRATE; NANOCRYSTAL; NITRIC OXIDE; SILICON;

ARTICLE; DIELECTRIC CONSTANT; ELECTRIC FIELD; PRIORITY JOURNAL; SPIN TRAPPING; TEMPERATURE DEPENDENCE;

EID: 67651227208     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/30/305704     Document Type: Article

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