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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 33-36, 2006, Pages

Nanocrystalline silicon embedded zirconium-doped hafnium oxide high-k memory device

(4) Lu, Jiang a Kuo, Yue a Yan, Jiong a Lin, Chen Han a

a TEXAS A AND M UNIVERSITY (United States)

Author keywords

Charge trapping; Doped high k material; Embedded nc Si; Nanocrystalline silicon; nc Si; Nonvolatile memory

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); EMBEDDED SYSTEMS; HAFNIUM COMPOUNDS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; SILICON; ZIRCONIUM;

CHARGE TRAPPING; DOPED HIGH K MATERIAL; EMBEDDED NC SI; NANOCRYSTALLINE SILICON; NC SI;

DATA STORAGE EQUIPMENT;

EID: 33748800302 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L901 Document Type: Article

Times cited : (42)

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