Formation of 2-D arrays of silicon nanocrystals in thin siO2 films by very-low energy Si+ ion implantation

Electrochemical and Solid-State Letters

Volumn 1, Issue 2, 1998, Pages 88-90

  Normand, P ^a   Tsoukalas, D ^a,e   Kapetanakis, E ^a   Van Den Berg, J A ^b   Armour, D G ^b   Stoemenos, J ^c   Vieu, C ^d  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^d CNRS   (France)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ION IMPLANTATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

FACETED PLATELETS;

NANOSTRUCTURED MATERIALS;

EID: 0032141470     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390646     Document Type: Article

References (19)

1. L. Dori, A. Acovic, D. J. DiMaria, and C. H. Hsu, IEEE Electron Device Lett., EDL-14, 283 (1993).
2. Q. Ye, R. Tsu, and E. H. Nicollian, Phys. Rev. B, 44, 1806 (1991).
3. S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett., 69, 1232 (1996).
4. H. Hanafi, S. Tiwari, and I. Khan. IEEE Trans. Electron Devices, ED-43, 1553 (1996).
5. D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson. J. Appl. Phys., 56, 401 (1984).
6. Q. Zhang, S. C. Bayliss, and D. A. Hutt, Appl. Phys. Lett., 66, 1977 (1995).
7. H. Z. Song, X. M. Bao, N. S. Li, and J. Y. Zhang, J. Appl. Phys., 82, 4028 (1997).
8. A. D. Lan, B. X. Liu, and X. D. Bai, J. Appl. Phys., 82, 5144 (1997).
9. Y. Wei, R. M. Wallace, and A. C. Seabaugh, J. Appl. Phys., 81, 6415 (1997).
10. L. Guo, E. Leobandung, and S. Y. Chou, Appl. Phys. Lett., 70, 850 (1997).
11. M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, Appl. Phys. Lett., 70, 2291 (1997).
12. J. G. Zhu, C. W. White, J. D. Budai, S. P. Withrow, and Y. Chen, J. Appl. Phys., 78, 4386 (1995).
13. T. Komoda, J. Kelly, F. Cristiano, A. Nejim, P. L. F. Hemment, K. P. Homewood, R. Gwillliam, J. E. Mynard, and B. J. Sealy, Nucl. Instrum. Methods Phys. Res. Sect. B, 96, 387 (1995).
14. G. Ghislotti, B. Nielsen, P. Asoka-Kumar, K. G. Lynn, L. F. Di Mauro, C. E. Bottani, F. Corni, R. Tonini, and G. P. Ottaviani, J. Electrochem. Soc., 144, 2196 (1997).
15. K. Nakazato and H. Ahmed, Jpn. J. Appl. Phys., 34, 700 (1995).
16. A. Agarwal, T. E. Haynes, D. J. Eaglesham, H. J. Gossmann, D, C. Jacobson, J. M. Poate, and Y. E. Erokhin, Appl. Phys. Lett., 70, 3332 (1997).
17. J. F. Ziegler, J. P. Biersack, and U. Littmark, in The Stopping and Range of Ions in Solids, J. F. Ziegler, Editor, Pergamon, New York (1985).
18. J. Stoemenos, C. Jaussaud, M. Bruel, and J. Margail, J. Cryst. Growth, 73, 546 (1985).
19. Y. Ishikawa, N. Shibata, and S. Fukatsu, Appl. Phys. Lett., 68, 2249 (1996).