Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2403-2405

  Wellner, A ^a   Paillard, V ^a   Coffin, H ^b   Cherkashin, N ^b,c   Bonafos, C ^b  

^a CNRS   (France)

^b CEMES CNRS   (France)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTERS; CROSS-SECTIONS; DOWN-SHIFTING; OPTICAL PHONON PEAK;

AMORPHOUS MATERIALS; ANNEALING; ELECTRON TUNNELING; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILMS;

EID: 4344586736     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1765853     Document Type: Article

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