Controlled fabrication of Si nanocrystals embedded in thin SiON layers by PPECVD followed by oxidizing annealing

Nanotechnology

Volumn 21, Issue 28, 2010, Pages

  Perret Tran Van, S ^a,b   Makasheva, K ^a,c   Despax, B ^a,d   Bonafos, C ^b   Coulon, P E ^b   Paillard, V ^b  

^a d'Hydraulique et des Telecommunications   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c FCS STAE   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; AMORPHOUS SI; ANNEALING PROCESS; AS-DEPOSITED FILMS; CONTROLLED THICKNESS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELLIPSOMETRY MEASUREMENTS; FUTURE MEMORY; HIGH DENSITY; OXIDATION MECHANISMS; OXIDIZING CONDITIONS; SI NANOCRYSTAL; SILICON OXYNITRIDE FILMS; SILICON SUBSTRATES; THERMAL-ANNEALING; TUNNEL OXIDES;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; QUALITY CONTROL; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS;

EID: 77954163803     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/28/285605     Document Type: Article

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