Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Kapetanakis, E ^a   Normand, P ^a   Holliger, P ^b  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; EPITAXIAL GROWTH; GATES (TRANSISTOR); GERMANIUM; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES;

CAPACITANCE-VOLTAGE MEASUREMENTS; ELECTRICAL MODIFICATION; VOLTAGE STRESS;

MOS CAPACITORS;

EID: 41549158270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2888537     Document Type: Article

References (28)

1. H. Hanafi, S. Tiwari, and I. Khan, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.535349 43, 1553 (1996).
2. E. Kapetanakis, P. Normand, D. Tsoukalas, and K. Beltsios, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1470262 80, 2794 (2002).
3. A. Kalnitsky, A. R. Boothroyd, J. P. Ellul, E. H. Poindexter, and P. J. Caplan, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(90)90236-8 33, 523 (1990).
4. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Asssayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ameen, M. Perego, and M. Fanciulli, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/j.nimb.2003.11.039 216, 228 (2004).
5. J. V. Borany, R. Grötzschel, K.-H. Heinig, A. Markwitz, W. Matz, B. Schmidt, and W. Skorupa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.120294 71, 3215 (1997).
6. J. V. Borany, R. Grötzschel, K.-H. Heinig, A. Markwitz, B. Schmidt, W. Skorupa, and H.-J. Thees, Solid-State Electron. SSELA5 0038-1101 10.1016/S0038-1101(99)00040-4 43, 1159 (1999).
7. K.-H. Heinig, B. Schmidt, A. Markwitz, R. Grötzschel, M. Strobel, and S. Oswald, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/S0168-583X(98)00862-3 148, 969 (1999).
8. S. Duguay, J. J. Grob, A. Slaoui, Y. Le Gall, and M. Amann-Liess, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1909286 97, 104330 (2005).
9. V. Beyer, J. von Borany, and M. Klimenkov, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2723864 101, 094507 (2007).
10. A. Meldrum, R. F. Haglund, Jr., Lynn, Jr., L. A. Boatner, and C. W. White, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/1521-4095(200110) 13:19<1431::AID-ADMA1431>3.0.CO;2-Z 13, 1431 (2001).
11. A. Nakajima, T. Futatsugi, H. Nakao, T. Usuki, N. Horiguchi, and N. Yokoyama, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368199 84, 1316 (1998).
12. A. Nakajima, H. Nakao, H. Ueno, T. Futatsugi, and N. Yokoyama, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122087 73, 1071 (1998).
13. E. S. Marstein, A. E. Gunnaes, A. Olsen, T. G. Finstad, R. Turan, and U. Serincan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1790579 96, 4308 (2004).
14. P. L. F. Hemment, F. Cristiano, A. Nejim, S. Lombardo, K. K. Larssen, F. Priolo, and R. C. Barklie, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(95)00418-1 157, 147 (1995).
15. E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, T. Travlos, J. Gautier, L. Palun, and F. Jourdan, Proceedings of the 29th European Solid State Device Research Conference, Leuven, Belgium, 13-14 September 1999 (unpublished), p. 432.
16. P. Normand, K. Beltsios, E. Kapetanakis, D. Tsoukalas, T. Travlos, J. Stoemenos, J. Van Den Berg, S. Zhang, C. Vieu, H. Launois, J. Gautier, F. Jourdan, and L. Palun, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/S0168-583X(01)00495-5 178, 74 (2001).
17. K. Beltsios, P. Normand, E. Kapetanakis, D. Tsoukalas, and A. Travlos, Microelectron. Eng. MIENEF 0167-9317 61-62, 631 (2002).
18. M. Klimenkov, W. Matz, and J. V. Borany, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 168, 367 (2000).
19. C. J. Park, H. Y. Cho, S. Kim, S.-H. Choi, R. G. Elliman, J. H. Han, C. Kim, H. N. Hwang, and C. C. Hwang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2168249 99, 036101 (2006).
20. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
21. A. N. Nazarov, T. Gebel, L. Rebohle, W. Scorupa, I. N. Osiyuk, and V. S. Lysenko, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1604934 94, 4440 (2003).
22. R. Turan and T. G. Finstad, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/7/1/013 7, 75 (1992).
23. H. Tsuji, N. Arai, N. Gotoh, T. Minotani, K. Kojima, K. Adachi, H. Kotaki, T. Ishibashi, Y. Gotoh, and J. Ishikawa, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/j.nimb.2006.12.156 257, 94 (2007).
24. P. Holliger, F. Laugier, and J. C. Dupuy, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1341 34, 472 (2002).
25. A. Gupta, M. M. Rahman, J. Qiao, C. Y. Yang, S. Im, N. W. Cheung, and P. K. L. Yu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.355963 75, 4252 (1994).
26. M. V. Fischetti and S. E. Laux, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363052 80, 2234 (1996).
27. S. A. Lombardo, V. Privitera, A. Pinto, P. Ward, G. La Rosa, and S. U. Campisano, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.701485 45, 1531 (1998).
28. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).