Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 730-735

  Normand, P ^a   Dimitrakis, P ^a   Kapetanakis, E ^a   Skarlatos, D ^a   Beltsios, K ^b   Tsoukalas, D ^c   Bonafos, C ^d   Coffin, H ^d   Benassayag, G ^d   Claverie, A ^d   Soncini, V ^e   Agarwal, A ^f   Sohl, Ch ^f   Ameen, M ^f  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^d CEMES CNRS   (France)

^e ST Central R and D Agrate   (Italy)

^f AXCELIS TECHNOLOGIES   (United States)

Author keywords

Ion beam synthesis; Nanocrystal memory; Non volatile memory; Silicon implantation; Silicon nanocrystals

Indexed keywords

ION BEAMS; ION IMPLANTATION; MOS CAPACITORS; NONVOLATILE STORAGE; PLASMA APPLICATIONS; PROM; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

ION BEAM SYNTHESIS; NANOCRYSTAL MEMORY; PROTOTYPE DEVICES; SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 2542488754     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00211-4     Document Type: Conference Paper

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