Structural and optical properties of high density Si-ncs synthesized in SiNx:H by remote PECVD and annealing

Materials Science and Engineering: B

Volumn 147, Issue 2-3, 2008, Pages 218-221

  Carrada, M ^a   Zerga, A ^a   Amann, M ^a   Grob, J J ^a   Stoquert, J P ^a   Slaoui, A ^a   Bonafos, C ^b   Schamm, S ^b  

^a UMR 7005   (France)

^b CEMES CNRS   (France)

Author keywords

EF TEM; Photoluminescence; Si ncs; Silicon nitride

Indexed keywords

NANOCRYSTALLINE SILICON; NONVOLATILE STORAGE; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SILICON NITRIDE; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

ANTIREFLECTION LAYERS; PHOTOVOLTAIC CONVERSION;

NANOCRYSTALS;

EID: 38749152075     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.09.042     Document Type: Article

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