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Volumn 110, Issue 3, 2011, Pages

Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices

(6) Fazzini, Pier Francesco a,b Bonafos, Caroline a Claverie, Alain a Hubert, Alexandre c Ernst, Thomas c Respaud, Marc b

a UNIVERSITÉ DE TOULOUSE (France)

b Institut National des Sciences Appliquées (France)

c CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

CORE DIAMETERS; KEY MODELS; MAIN PARAMETERS; NANO-DEVICES; NANOWIRE ASSEMBLIES; NON-UNIFORM DEFORMATION; NONLINEAR EFFECT; OXIDATION PROCESS; OXIDATION RATES; OXIDATION TIME; PREDICTIVE MODELS; SILICON NANOWIRES; SIZE DISPERSION; STRESS EFFECTS; THERMAL BUDGET; THERMAL OXIDATION;

COMPUTER SIMULATION; NANOWIRES; OXIDATION; SCANNING ELECTRON MICROSCOPY; SHEAR FLOW; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VISCOSITY;

SILICON OXIDES;

EID: 80051937507 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3611420 Document Type: Article

Times cited : (33)

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