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Volumn 45, Issue 29-32, 2006, Pages

Nano-scale memory characteristics of silicon nitride charge trapping layer with silicon nanocrystals

Author keywords

C AFM; Nano scale memory; Nonvolatile memory; Si nanocrystal; SONOS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; CURRENT VOLTAGE CHARACTERISTICS; MOS DEVICES; NONVOLATILE STORAGE; SILICON NITRIDE;

EID: 33748771889     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L807     Document Type: Article
Times cited : (9)

References (12)
  • 9
    • 34548581404 scopus 로고    scopus 로고
    • S. Zaima, A. Seko, Y. Watanabe, T. Sago, M. Sakashita, H. Kondo, A. Sakai and M. Ogawa: Ext. Abstr. 2005 Int. Conf. Solid State Devices and Materials, 2005, p. 236.
    • S. Zaima, A. Seko, Y. Watanabe, T. Sago, M. Sakashita, H. Kondo, A. Sakai and M. Ogawa: Ext. Abstr. 2005 Int. Conf. Solid State Devices and Materials, 2005, p. 236.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.