Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1823-1829

  Kim, Dong Won ^a   Kim, Taehoon ^b   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Flash memory; Hafnium oxide; HfO2 tunneling oxide; High K dielectric; SiGe quantum dot floating gate

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; FLASH MEMORY; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; SILICA; SILICON WAFERS;

FLOATING GATE MEMORY DEVICE; HAFNIUM DIOXIDE; SILICON GERMANIUM QUANTUM DOT FLASH MEMORY; TUNNELING OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041409629     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815370     Document Type: Article

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