Electronic properties of Ge nanocrystals for non volatile memory applications

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1310-1314

  Kanoun, M ^a   Busseret, C ^a   Poncet, A ^a   Souifi, A ^a   Baron, T ^b   Gautier, E ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

Charging; Ge nanocrystals; Memories; MOS

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; ELECTRIC FIELD EFFECTS; GERMANIUM; MOS DEVICES; SILICON;

GE NANOCRYSTALS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON NANOCRYSTAL MEMORIES;

NANOSTRUCTURED MATERIALS;

EID: 33747419986     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.07.006     Document Type: Article

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