Ge nanocrystals formation on SiO2 by dewetting: Application to memory

EPJ Applied Physics

Volumn 41, Issue 2, 2008, Pages 103-106

  Szkutnik, P D ^a   Karmous, A ^a   Bassani, F ^a   Ronda, A ^a   Berbezier, I ^a   Gacem, K ^b   El Hdiy, A ^b   Troyon, M ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; PHASE EQUILIBRIA; SILICA; SIZE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

DEWETTING; EQUILIBRIUM SHAPE; LAYER THICKNESS; MASS CONSERVATION;

NANOCRYSTALS;

EID: 40049083886     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008006     Document Type: Article

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