A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 683-686

  De Blauwe, J ^a   Ostraat, M ^b   Green, M L ^a   Weber, G ^a   Sorsch, T ^a   Kerber, A ^a   Klemens, F ^a   Cirelli, R ^a   Ferry, E ^a   Grazul, J L ^a   Baumann, F ^a   Kim, Y ^a   Mansfield, W ^a   Bude, J ^a   Lee, J T C ^a   Hillenius, S J ^a   Flagan, R C ^b   Atwater, H A ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOLS; CHARGE CARRIERS; DATA STORAGE EQUIPMENT; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE;

NON-VOLATILE MEMORIES;

FIELD EFFECT TRANSISTORS;

EID: 0034453547     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904411     Document Type: Article

References (7)

1. 2PROM memory cell less than 100 square microns using 1 micron technology
2. Volatile and non-volatile memories in silicon with nano-crystal storage
3. Room-temperature single-electron memory
4. Fast and long retention time nano-crystal memory
5. Single charge and confinement effects in nano-crystal memories
6. Oxidation property of silicon small particles
7. Narrow channel MOS memory based on silicon nano-crystals