A novel reference scheme for reading passive resistive crossbar memories

IEEE Transactions on Nanotechnology

Volumn 5, Issue 6, 2006, Pages 687-691

  Mustafa, Jakob ^a,b   Waser, Rainer ^a,b,c  

^a IEEE   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Hysteretic resistive elements; Nano scale; Passive crossbar array; Reference scheme; Resistive memory

Indexed keywords

HYSTERETIC RESISTIVE ELEMENTS; MEMORY ARCHITECTURE; MEMORY ELEMENTS; PASSIVE RESISTIVE CROSSBAR MEMORIES;

ARRAYS; COMPUTER ARCHITECTURE; ELECTRIC POTENTIAL; NANOTECHNOLOGY;

STORAGE ALLOCATION (COMPUTER);

EID: 33751538494     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.885016     Document Type: Article

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