Nanoscale molecular-switch devices fabricated by imprint lithography

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1610-1612

  Chen, Yong ^a   Ohlberg, Douglas A A ^a   Li, Xuema ^a   Stewart, Duncan R ^a   Williams, R Stanley ^a   Jeppesen, Jan O ^b,d   Nielsen, Kent A ^b,d   Stoddart, J Fraser ^b   Olynick, Deirdre L ^c   Andersen, Erik ^c  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC EQUIPMENT; ELLIPSOMETRY; LOGIC CIRCUITS; MOLECULAR WEIGHT; MONOLAYERS; POLYMETHYL METHACRYLATES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

MOLECULAR ELECTRONICS;

NANOSTRUCTURED MATERIALS;

EID: 0037429907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559439     Document Type: Article

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