Improvement of resistance switching characteristics in NiO films obtained from controlled Ni oxidation

Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07

Volumn , Issue , 2007, Pages 1-4

  Courtade, L ^a   Turquat, Ch ^a   Muller, Ch ^a   Lisoni, J G ^b   Goux, L ^b   Wouters, D J ^b  

^a UNIVERSITÉ DE TOULON   (France)

^b IMEC   (Belgium)

Author keywords

Binary oxides; Film microstructure; Resistive switching memories; Switching phenomena

Indexed keywords

CONDUCTIVE MATERIALS; COPPER COMPOUNDS; ELECTRODES; NICKEL; NICKEL OXIDE; NONVOLATILE STORAGE; SWITCHING; TITANIUM DIOXIDE; TRANSITION METAL OXIDES; ZIRCONIA;

BINARY OXIDES; FILM MICROSTRUCTURES; NONVOLATILE MEMORY DEVICES; RESISTANCE SWITCHING; RESISTIVE SWITCHING MEMORY; REVERSIBLE FORMATION; SWITCHING CHARACTERISTICS; SWITCHING PHENOMENON;

OXIDE FILMS;

EID: 48549105189     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nvmt.2007.4389934     Document Type: Conference Paper

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