Observation of unipolar resistance switching in silver doped methyl-silsesquioxane

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1531-1533

  Rosezin, R ^a   Meier, M ^a   Trellenkamp, S ^a   Kugeler C ^a   Waser, R ^a,b,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c JARA Fundamentals for Future Information Technology   (Germany)

Author keywords

Memory devices; Methyl silsesquioxane; MSQ; Nano imprint lithography; NIL; Resistive switching

Indexed keywords

BOTTOM ELECTRODES; CROSS-BAR STRUCTURES; CROSSBAR ARRAYS; ELECTRODE LAYERS; INTEGRATION DENSITY; MEMORY DEVICE; METHYLSILSESQUIOXANE; NANO IMPRINT; NEW MATERIAL; NON-VOLATILE MEMORIES; PROCESS TEMPERATURE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SINGLE JUNCTION;

ELECTRODES; PLATINUM; SILVER; SWITCHING; SWITCHING SYSTEMS;

NANOIMPRINT LITHOGRAPHY;

EID: 76949099715     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.034     Document Type: Article

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