Electrical properties of Pt interconnects for passive crossbar memory arrays

Microelectronic Engineering

Volumn 86, Issue 11, 2009, Pages 2275-2278

  Rosezin, R ^a   Nauenheim, C ^a   Trellenkamp, S ^a   Kugeler C ^a   Waser, R ^a,b,c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c JARA Fundamentals of Future Information Technology   (Germany)

Author keywords

Nano crossbar arrays; Nano electrodes; Nano structuring; Resistive switching

Indexed keywords

ADDITIONAL ANNEALING; BEYOND CMOS; CROSS-BAR MEMORIES; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; ELECTRON BEAM DIRECT WRITING; ELECTRON BEAM EVAPORATION; HIGH STABILITY; LIFT-OFF PROCESS; NANO CROSSBAR ARRAYS; NANO ELECTRODES; NANO STRUCTURING; NON-VOLATILE MEMORY TECHNOLOGY; OPERATIONAL CURRENT; PLATINUM WIRE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SIDE WALLS; SURFACE EFFECT;

ELECTRIC WIRE; ELECTRODES; ELECTRON BEAMS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOWIRES; PLATINUM; SWITCHING SYSTEMS;

ELECTRIC PROPERTIES;

EID: 69549130736     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.004     Document Type: Article

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