SCOPUS 정보 검색 플랫폼

IEEE Journal of Solid-State Circuits

Volumn 41, Issue 3, 2006, Pages 699-704

Noise-shaping sense amplifier for MRAM cross-point arrays

(2) Leslie, Matthew B a,c Baker, R Jacob b,d

a UNIVERSITY OF CALIFORNIA (United States)

b Boise State University (United States)

c Eta Kappa Nu ^* (United States)

d BOISE STATE UNIVERSITY (United States)

Author keywords

Current mode sensing; Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); Noise shaping modulator; Self referenced sensing; Voltage mode sensing

Indexed keywords

CURRENT-MODE SENSING; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); NOISE-SHAPING MODULATOR; SELF-REFERENCED SENSING; VOLTAGE-MODE SENSING;

CMOS INTEGRATED CIRCUITS; MODULATORS; RANDOM ACCESS STORAGE; SIGNAL TO NOISE RATIO; TUNNEL JUNCTIONS;

SENSORS;

EID: 33644659985 PISSN: 00189200 EISSN: None Source Type: Journal
DOI: 10.1109/JSSC.2005.864103 Document Type: Article

Times cited : (16)

References (8)

1
- 0000490786
- Diode-free magnetic random access memory using spin-dependent tunneling effect
- Sep.
- F. Wang, "Diode-free magnetic random access memory using spin-dependent tunneling effect," Appl. Phys. Lett., vol. 77, no. 13, pp. 2036-2038, Sep. 2000.
- (2000) Appl. Phys. Lett. , vol.77 , Issue.13 , pp. 2036-2038
- Wang, F.¹

2
- 0036758682
- Memories of tomorrow
- Sep.
- W. Reohr, H. Honigschmid, R. Robertazzi, D. Gogl, F. Pesavento, S. Lammers, K. Lewis, C. Arndt, Y. Lu, H. Viehmann, R. Scheuerlein, L.-K. Wang, P. Trouilloud, S. Parkin, W. Gallagher, and G. Muller, "Memories of tomorrow," IEEE Circuits Devices Mag., vol. 18, no. 5, pp. 17-27, Sep. 2002.
- (2002) IEEE Circuits Devices Mag. , vol.18 , Issue.5 , pp. 17-27
- Reohr, W.¹ Honigschmid, H.² Robertazzi, R.³ Gogl, D.⁴ Pesavento, F.⁵ Lammers, S.⁶ Lewis, K.⁷ Arndt, C.⁸ Lu, Y.⁹ Viehmann, H.¹⁰ Scheuerlein, R.¹¹ Wang, L.-K.¹² Trouilloud, P.¹³ Parkin, S.¹⁴ Gallagher, W.¹⁵ Muller, G.¹⁶

3
- 0038645310
- A 512 Kb cross-point cell MRAM
- N. Sakimura, T. Honda, T. Sugibayashi, S. Miura, H. Numata, H. Hada, and S. Tahara, "A 512 Kb cross-point cell MRAM," in IEEE ISSCC Dig. Tech. Papers, 2003, pp. 278-279.
- (2003) IEEE ISSCC Dig. Tech. Papers , pp. 278-279
- Sakimura, N.¹ Honda, T.² Sugibayashi, T.³ Miura, S.⁴ Numata, H.⁵ Hada, H.⁶ Tahara, S.⁷

4
- 33644655274
- Magnetic tunnel junction materials for electronic applications
- Jun. Electronic supplement
- J. M. Slaughter, E. Y. Chen, R. Whig, B. N. Engel, J. Janesky, and S. Tehrani, "Magnetic tunnel junction materials for electronic applications," Member J. Minerals, Metals Materials Soc., Jun. 2000. Electronic supplement.
- (2000) Member J. Minerals, Metals Materials Soc.
- Slaughter, J.M.¹ Chen, E.Y.² Whig, R.³ Engel, B.N.⁴ Janesky, J.⁵ Tehrani, S.⁶

5
- 84888783239
- "MRAM device including digital sense amplifiers," U.S. patent 6,188,615, Feb. 13
- F. A. Perner, K. J. Eldredge, and L. T. Tran, "MRAM device including digital sense amplifiers," U.S. patent 6,188,615, Feb. 13, 2001.
- (2001)
- Perner, F.A.¹ Eldredge, K.J.² Tran, L.T.³

6
- 0003476558
- New York: Wiley-IEEE
- R. J. Baker, CMOS Circuit Design, Layout, and Simulation, 2nd ed. New York: Wiley-IEEE, 2005.
- (2005) CMOS Circuit Design, Layout, and Simulation, 2nd Ed.
- Baker, R.J.¹

7
- 0043004948
- New York: Wiley-IEEE
- R. J. Baker, CMOS Mixed-Signal Circuit Design. New York: Wiley-IEEE, 2002.
- (2002) CMOS Mixed-signal Circuit Design
- Baker, R.J.¹

8
- 84888787948
- "Multi-sample read circuit having test mode of operation," U.S. patent application 20,050,102,576, May 12
- F. A. Ferner and K. K. Smith, "Multi-sample read circuit having test mode of operation," U.S. patent application 20,050,102,576, May 12, 2005.
- (2005)
- Ferner, F.A.¹ Smith, K.K.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.