Circuit fabrication at 17 nm half-pitch by nanoimprint lithography

Nano Letters

Volumn 6, Issue 3, 2006, Pages 351-354

  Jung, Gun Young ^a,b   Johnston Halperin, Ezekiel ^c   Wu, Wei ^a   Yu, Zhaoning ^a   Wang, Shih Yuan ^a   Tong, William M ^a,d   Li, Zhiyong ^a   Green, Jonathan E ^c   Sheriff, Bonnie A ^c   Boukai, Akram ^c   Bunimovich, Yuri ^c   Heath, James R ^c   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c California Institute of Technology   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DENSITY; NANOIMPRINT LITHOGRAPHY; PATTERN TRANSFER TECHNIQUE;

ALUMINUM COMPOUNDS; FABRICATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SUPERLATTICES;

LITHOGRAPHY;

EID: 33645417245     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052110f     Document Type: Article

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