A novel dual-layered electrolytic resistance memory with enhanced retention

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 764-766

  Soni, R ^a   Schindler, C ^a   Weides, M ^a   Rudiger A ^a   Kugeler C ^a   Waser, R ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; GERMANIUM; NANOTECHNOLOGY; PLATINUM; SEMICONDUCTOR STORAGE; SOLID ELECTROLYTES;

ACTIVE MATERIALS; APPLICATIONS.; BOTTOM ELECTRODES; CELL PROGRAMMINGS; ELECTROLYTIC RESISTANCES; ELEVATED TEMPERATURES; INSULATOR LAYERS; LOW POWERS; MEMORY CELLS; POINT STRUCTURES; RETENTION ABILITIES;

ELECTROLYSIS;

EID: 55349117458     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.228     Document Type: Conference Paper

References (10)

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