MBE - Enabling technology beyond Si CMOS

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 511-517

  Chang, P ^a   Lee, W C ^a   Lin, T D ^a   Hsu, C H ^b,c   Kwo, J ^a,d   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Ge MOSFET; High dielectrics; High carrier mobility semiconductors; IIIV MOSFET; Molecular beam epitaxy; Single crystal growth

Indexed keywords

ENABLING TECHNOLOGIES; EQUIVALENT OXIDE THICKNESS; GE MOSFET; HIGH CARRIER MOBILITY; HIGH CARRIER MOBILITY SEMICONDUCTORS; HIGH TEMPERATURE; III-V MOSFET; INTERFACIAL DENSITY; MOSFETS; SELF-ALIGNED; SI CMOS; THERMAL STABILITY; THIN-FILM TECHNIQUE; UNPRECEDENTED DEMAND;

CARRIER MOBILITY; CRYSTAL GROWTH; DIELECTRIC MATERIALS; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

MOSFET DEVICES;

EID: 79958014503     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.102     Document Type: Article

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