Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2195-2198

  Chu, L K ^a   Lee, W C ^a   Huang, M L ^a   Chang, Y H ^a   Tung, L T ^a   Chang, C C ^a   Lee, Y J ^a   Kwo, J ^a   Hong, M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy (MBE); B1. Oxides; B2. Germanium; B3. Field effects transistors

Indexed keywords

CAPACITANCE; CRYSTAL GROWTH; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; MOS CAPACITORS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM ALLOYS;

A3. MOLECULAR BEAM EPITAXY (MBE); B1. OXIDES; B2. GERMANIUM; B3. FIELD EFFECTS TRANSISTORS; CAPACITANCE-EQUIVALENT THICKNESS; DRAIN CURRENT DENSITIES; ELECTRICAL PERFORMANCE; GATE LEAKAGE CURRENT DENSITIES; GATE LENGTHS; GATE OXIDES; GATE WIDTHS; GE DIFFUSIONS; HIGH TEMPERATURES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; IN-SITU; INTERFACIAL LAYERS; METAL-OXIDE SEMICONDUCTORS; PEAK TRANSCONDUCTANCES;

SEMICONDUCTING GERMANIUM;

EID: 63349111613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.069     Document Type: Article

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