Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 423-426

  Lay, T S ^a   Huang, K H ^a   Hung, W H ^b   Hong, M ^c   Kwo, J ^c   Mannaerts, J P ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

Depth profile; Ga2O3(Gd2O3); GaAs passivation; Photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; COMPOSITION EFFECTS; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTER DEPOSITION; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE LEVEL PHOTOELECTRON SPECTROSCOPY; MICROSCOPIC COMPOSITIONS;

SEMICONDUCTING FILMS;

EID: 0035275930     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00049-1     Document Type: Article

References (8)