Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 805-807

  Chin, Hock Chun ^a   Gong, Xiao ^a   Liu, Xinke ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High mobility; InGaAs; MOSFET; Strain

Indexed keywords

CHANNEL REGION; COMPRESSIVE STRAIN; ELECTRON MASS; HIGH MOBILITY; IN-SITU; IN-SITU DOPING; INGAAS; LATTICE-MISMATCHED; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET; NMOSFET; NMOSFETS; RESISTANCE REDUCTION; SELECTIVE EPITAXY; SERIES RESISTANCES; SI-DOPING; STRUCTURE MODIFICATION; TRANSPORT DIRECTION;

CARRIER CONCENTRATION; CRYSTAL GROWTH; DOPING (ADDITIVES); GALLIUM; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; ORGANIC CHEMICALS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS;

TENSILE STRAIN;

EID: 68249144753     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024649     Document Type: Article

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